Red-emitting InxGa1−xN/InyGa1−yN quantum wells grown on lattice-matched InyGa1−yN/ScAlMgO4(0001) templates

Abstract

Red-emitting InxGa1−xN/InyGa1−yN quantum wells (x > 0.2, y ∼ 0.17) are grown on ScAlMgO4(0001) substrates with lattice-matched InyGa1−yN templates. The ratio of the photoluminescence (PL) intensity at room temperature against that at 11 K is 0.14 for a red-emitting InxGa1−xN/InyGa1−yN QW on a ScAlMgO4 substrate, whereas that for a conventional InxGa1−xN/GaN QW on a sapphire(0001) substrate is 0.004. The lattice-matched InyGa1−yN/ScAlMgO4 template generates a remarkable improvement in internal quantum efficiency. Additionally, the spatial uniformity of PL is also drastically improved, showing promise as long wavelength emitters.