Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors

Abstract

Single crystal growth of ScAlMgO4 boules with 10 mm up to 4 in. (c.a. 101.6 mm) in diameter by Czochralski technique was demonstrated. Some high quality ScAlMgO4 single crystal boules with 2-inches (c.a. 50.8 mm) in diameter were successfully grown without dislocation, which was revealed by X-ray rocking curve and X-ray topography measurements for the c-plane wafers. After a GaN template was formed on a substrate cut out from a grown ScAlMgO4 boule by using metalorganic vapor phase epitaxy, a thick GaN film was epitaxially grown on the template using hydride vapor phase epitaxy (HVPE). At the cooling stage after the growth in the HVPE process, the thick grown GaN film was separated by itself from the ScAlMgO4 substrate due to high cleavability of ScAlMgO4, which makes it possible the reuse of the substrate. The free-standing GaN grown on the reused ScAlMgO4 substrate showed the same quality as a GaN fabricated on a fresh ScAlMgO4 substrate. The reuse of ScAlMgO4 substrates is beneficial for saving the GaN films fabrication cost. The fabrication of a free-standing GaN substrate with 2 in. in diameter and 1 mm in thickness on ScAlMgO4 substrates was demonstrated to be more high-yield than the fabrication on a sapphire substrate. The growth method shown in this study is very promising, and it opens an efficient way to obtain GaN free-standing wafers and to reduce the production cost of GaN wafers.