High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid-phase-epitaxy technique

Abstract

A comparative study of the source seed and near equilibrium liquid-phase epitaxy (LPE) growth techniques is described. The results of such important characteristics as broad area laser thresholds, quaternary active layer mismatch, and photoluminescence peak wavelength for 1.3-μm InGaAsP double heterostructure material were compared. Double heterostructure material grown by the near equilibrium LPE growth technique exhibited a better overall quality. Moreover, run to run reproducibility of these same parameters, as well as their eventual intrawafer variability, were monitored over an extended period of time. Again, the near equilibrium LPE growth technique readily led to excellent quality double heterostructure material. Finally, these wafers were processed into oxide stripe gain guided lasers, having a high percentage of devices with acceptable electro-optical characteristics.