Abstract
Homogeneous, nearly perfect single crystals of Hg1-xCdxTe are extremely difficult to prepare due primarily to the high vapor pressure of mercury. However, epitaxially grown Hg1-xCdxTe layers have a high potential for yielding material of a substantially higher quality. Using a new, open-tube, horizontal slider-type liquid phase epitaxial (LPE) growth technique, in which mercury pressure controlled growth solutions are used, a high degree of growth solution compositional control has been demonstrated. LPE layers of Hg1-xCdxTe have been grown on CdTe substrates and their high quality has been confirmed by optical, transport and electron microprobe measurements. Layer thicknesses are uniform and have been varied from 5 to 40 μ by changing the degree of supercooling or the growth time. An electron carrier concentration as low as 8.6 × 1015/cm3 and electron Hall mobilities up to 2.8 × 105 cm2/V-sec at 77K have been measured on in situ annealed samples.
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