Abstract
Mercury cadmium telluride (Hg1-x Cdx Te) is an important material for infrared detector applications due to tde variable bandgap obtained through simply varying the mercury/cadmium ratio. Thus IR sensing systems with various wavelength requirements, typically from 2 to 12 μm, can potentially all be supplied by one materials technology. Bulk crystal growth technology was originally pursued for these applications. However, large, high quality crystals are difficult to grow because of the high melting point of HgCdTe and the resulting high Hg vapor pressure. Liquid phase epitaxial (LPE) growth techniques can lower the growth temperature through the use of a solvent, and allow the deposition of thin films on large foreign substrates that are grown without any Hg.
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