Abstract
The effects of indium melt‐carry‐over were investigated during liquid phase epitaxy (LPE) growth of double heterostructure (DH) material lattice‐matched to substrates. Compositional and thickness variations associated with melt carry‐over were studied as a function of the clearance between the substrate and the graphite boat. Moreover, x‐ray lattice‐constant measurements, as well as photoluminescence spectrum analysis, showed that meltback of the substrate prior to growth may lead to enhanced indium melt carry‐over. Finally, broad area lasers were fabricated, and it was shown that enhanced indium melt carry‐over led to nonlasing devices. A study of secondary ion mass spectroscopy (SIMS) profiles for the major constituents of DH material showed that indium melt carry‐over adversely affects interface abruptness and subsequent device performance.
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