Abstract
AbstractWe report here first magneto‐photoluminescence investigations under high pressure up to 6 GPa on III–VI layered semiconductor InSe. Both diamagnetism and magnetic field induced gap opening driven by Landau quantization became observable by using a 60 T pulsed magnet. The pressure‐induced enhancement of the diamagnetic coefficient is consistent with the increase of the dielectric constant under pressure while the evolution of the linear coefficient is consistent with a slight increase of the electron effective mass up to 4 GPa and a direct‐to‐indirect conduction‐band crossover around that pressure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call