Abstract
In this paper, we present the preliminary results of the combined effect of high pressure (up to 7.5 GPa) and strong external magnetic fields (up to 28.5 T) on the photoluminescence (PL) properties of Er3+–Yb3+ co-doped single-crystal thin films of well-oriented KY(WO4)2 at low temperatures. Measurements were carried out under pulsed magnetic field, exciting the Er3+ ions via upconversion mechanisms by a Ti:sapphire laser with the external magnetic field applied along the crystallographic b axis. The detailed study of the green 4S3/2→4I15/2 Er3+ PL after infrared excitation around 1 μm as a function of pressure and external magnetic field reveals the potential applicability of this system as sensor of high magnetic fields, high pressure and low temperature, simultaneously.
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