High-Performance Vertical $\beta$ -Ga2O3Schottky Barrier Diode With Implanted Edge Termination

Abstract

This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical $\beta $ -Ga2O3 Schottky barrier diode (SBD). With this ET, vertical $\beta $ -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}}$ ) of 5.1 $\text{m}\Omega \cdot \textrm {cm}^{\textrm {2}}$ at a lightly doped $\beta $ -Ga2O3 layer with epitaxial thickness of $10~\mu \text{m}$ , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm2. Combined with high forward current on/off ratio of 108 ~ 109, Schottky barrier height of 1.01 eV, and ideality factor of 1.05, vertical $\beta $ -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.