Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu,Jincheng Zhang,Xuanwu Kang,Yue Hao,Hong Zhou,Qian Feng,Chunfu Zhang,Yangyang Gao,Zhaoqing Feng,Yuncong Cai,Kui Dang

doi:10.1109/led.2018.2868444

Abstract

In this letter, we report on demonstrating high-performance field-plated lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}}$ </tex-math></inline-formula> ) of 24.3 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm 2 at an anode–cathode spacing ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {AC}}$ </tex-math></inline-formula> ) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$24~\mu \text{m}$ </tex-math></inline-formula> . To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm 2 is the highest BV achieved among all the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 SBDs. Meanwhile, lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 SBD with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {AC}} = \text {16}\,\,\mu \text{m}$ </tex-math></inline-formula> also demonstrates a high BV of 2.25 kV and low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}} = \text {10.2}\,\,\text{m}\Omega \cdot $ </tex-math></inline-formula> cm 2 , yielding a record high dc power FOM of 500 MW/cm 2 . Combining with 10 9 high-current ON/OFF ratio, 1.15-eV Schottky barrier height and 1.25 ideality factor, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga 2 O 3 SBD with field-plate structure shows its great promise for power electronics applications.

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