High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

Abstract

In this letter, a high-performance ( $\overline {{2}} 01$ ) $\beta $ -Ga2O3 vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxidation treatment, which reduces the electron concentration and effectively suppresses the peak electric field. By using a thermal oxidation termination, the breakdown voltage ( ${V}_{\text {br}}$ ) of $\beta $ -Ga2O3 SBD increases from 380 V to 940 V, and the specific on-resistance ( ${R}_{\text {on,sp}}$ ) just increases from 2.9 $\text{m}\Omega \cdot $ cm2 to 3.0 $\text{m}\Omega \cdot $ cm2. Our device demonstrates a power figure of merit ( ${V}_{\text {br}}^{{2}}/{R}_{\text {on,sp}})$ as high as 295 MW/cm2. These results indicate that the thermally oxidized termination shows a new way to improve the breakdown characteristics of $\beta $ -Ga2O3 SBD.