Abstract
This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.
Highlights
Wide band gap (WBG) power devices are dictating the pace of development of power electronics today
The packaging of silicon carbide (SiC) power devices are deeply rooted in the wire bonding approach used for silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs)
This paper aims at investigating the trends in SiC power packaging over the past decade and highlights some of the high-performance modules
Summary
Wide band gap (WBG) power devices are dictating the pace of development of power electronics today. Contributing further to the cause of power density is the fact that WBG devices may operate at high junction temperatures, introducing the possibility of employing more volumetrically efficient thermal management schemes. This combination can have a great impact on system miniaturization to help realize system architectures that do not even exist at the present time [7]. The packaging of SiC power devices are deeply rooted in the wire bonding approach used for silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
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