Comparative Evaluations and Failure Modes of Wire-Bonding Packaged SiC, Si, and Hybrid Power Modules

Abstract

With an increasing usage of silicon carbide (SiC) devices for renewable energy and electrified transportation, customized and reliable package of SiC power modules are urgently needed. To elevate the advanced performances of SiC devices and optimize the package of power modules, the parasitic sensitivity and temperature dependency of the SiC power module should be carefully addressed, compared with traditional Si power module by using the specific package. In this paper, under the same wire-bonding package, a full SiC power module is proposed, designed, and evaluated, compared with the full Si and hybrid power modules. In an inductive-clamped double-pulse test rig, these power modules are comparatively investigated in conditions of different load current and junction temperatures. Experimental results demonstrate the SiC power module achieves less switching loss and less sensitive to junction temperature; however, it is more sensitive to package parasitics. Comprehensively experimental results also reveal the limitations of traditional package for SiC power module. Furthermore, based on abundant failure samples, several typical destructive mechanisms of power modules are illustrated, which can improve the package of SiC power modules.