Abstract

We have investigated the molecular beam epitaxial growth and characteristics of long wavelength InAs pseudomorphic and metamorphic quantum dot lasers grown on GaAs. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit J th =180 A/cm 2 , T 0 =∞, dg/dn≃1x10 -14 cm 2 , f -3dB =11 GHz, chirp of 0.1 A and zero α-parameter. By detailed investigation of the growth kinetics and characteristics of metamorphic quantum dot heterostructures on GaAs, we have demonstrated high performance 1.5 μm InAs metamorphic quantum dot lasers on GaAs that are characterized J th ∼60A/cm 2 , T 0 ≃620K, and near-zero α-parameter and chirp (∼ 0.1 A).

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