Abstract
ABSTRACT We have investigated the molecular beam epitaxial growth and characteristics of self-organized In(Ga)As quantum dot lasers grown on GaAs and silicon. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 µm InAs quantum dot lasers on GaAs, which exhibit J th =180 A/cm 2 , T 0 = , dg/dn § 1×10 -14 cm 2 , f -3dB =11 GHz, chirp of 0.1 A and zero . -parameter. Utilizing thin ( 2 µm) GaAs buffer layers and quantum dots as dislocation filters, we have demonstrated room-temperature operational In 0.5 Ga 0.5 As quantum dot lasers grown directly on silicon, which are characterized by relatively low threshold current (J th ~ 900 A/cm 2 ), high output power (> 150 mW), large characteristic temperature (T 0 = 244 K) and constant output slope efficiency ( 0.3 W/A) in the temperature range of 5 to 95 o C. Keywords : Quantum dot, semiconductor laser, monolithic integration, silicon photonics, and optical interconnect
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