High performance self-organized In(Ga)As quantum dot lasers monolithically grown on silicon

Abstract

We have investigated the molecular beam epitaxial growth and characteristics of self-organized InGaAs quantum dot lasers grown directly on silicon utilizing thin (&#8804;2 &#956;m) GaAs buffer layers and quantum dot layers as dislocation filters. Both the photoluminescence intensity and linewidth from quantum dots grown on silicon are comparable to those from similar dots grown on GaAs substrates. Cross-sectional transmission electron microscopy studies indicate that defect-free quantum dots and low defect density quantum dot active regions can be achieved. The best devices are characterized by relatively low threshold current (<i>J_th</i> ~ 900 A/cm²), high output power (> 150 mW), large characteristic temperature (<i>T₀</i> = 244 K) and constant output slope efficiency (&#8805; 0.3 W/A) in the temperature range of 5 to 95 °C.