Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45 μm metamorphic InAs quantum dot lasers on GaAs

Abstract

We report the molecular beam epitaxial growth and characteristics of 1.45 μm metamorphic InAs quantum dot lasers grown on GaAs. By detailed investigation of the growth kinetics of the metamorphic quantum dot heterostructures, we have achieved high-quality 1.45 μm metamorphic quantum dot layers that exhibit intense and narrow photoluminescence linewidths (∼30 meV) at room temperature. Utilizing the techniques of p-doping and tunnel injection, we have also realized high-performance 1.45 μm lasers that exhibit ultra-low threshold current density (⩽70 A/cm 2), very high temperature stability ( T 0=556 K) in the temperature range of 263–305 K, and large frequency response ( f −3dB=8 GHz).