Abstract
High-performance quantum dot (QD) lasers near 1.3 μm were fabricated using four stacks of InAs QDs embedded within strained InGaAs quantum wells as an active region and a reactive-ion-etched 5-μm-ridge waveguide design. For a 1.5-mm-long cavity QD laser, ground-state continuous-wave (cw) lasing has been achieved with a single facet output power of 15 mW at temperatures as high as 100 °C, while at room temperature having a differential quantum efficiency of 55% and a single facet output power of 50 mW. The characteristic temperature T0 for ground-state cw lasing is 78 K up to our temperature measurement limit of 100 °C.
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