High performance floating p‐well carrier stored trench bipolar transistor with L‐shaped shield gates

Abstract

A novel floating p-well carrier stored trench bipolar transistor with L-shaped shield gates (LSG-FP-CSTBT) is proposed in this Letter. The proposed device features combinatorial L-shaped shield gates with a thick oxide layer in the lower part of the trench. Numerical analysis results show that compared to the conventional FP-CSTBT, the shield effect provided by the LSGs not only improves the trade-off relationship between the on-state voltage drop ( V CEON ) and turn-off loss ( E OFF ), but also improves the trade-off relationship between the turn-on loss ( E ON ) of the device and reverse recovery d V AK / d t of the antiparallel freewheeling diode. Therefore, improved device performance and reduced electromagnetic interference noise are obtained.