Abstract
In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer’s length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer’s length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm−2eV−1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.
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