Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Abstract

High stability amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) were fabricated on glass substrate without post annealing. The fabrication process and the stability of back channel etched (BCE) bottom gate a-IGZO TFTs on glass were proposed in detail. We studied the stability of the a-IGZO TFTs are subjected to the negative and positive gate bias stress. The threshold voltage (V TH ) shift ΔV TH =−1.93V after 2000s negative gate bias stress. The ΔV TH =0.63V after 2000s positive gate bias stress. The threshold voltage shift of the TFT after 2.5×104s of constant bias stress (V GS = 20V, V DS = 5V) is as small as 1.3V. Furthermore, a negligible small amount of continuous drain current degradation over the entire constant voltage bias stress duration was observed. A 4.3×5.7cm2 active matrix organic light-emitting diode (AMOLED) panel driven by the a-IGZO TFTs with conventional two transistors and one capacitor (2T1C) pixel circuit was successfully fabricated.