Abstract
A new back-channel-etch (BCE) process for fabricating amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) is demonstrated. The damage-free back channel surface by using Al-doped ZnO (AZO) transparent conducting oxide (TCO) as the S/D etch buffer layer can be achieved successfully and the fabricated BCE-type a-IGZO TFTs show excellent electrical performance and gate bias-stress stability. The major performance parameters include a subthreshold swing SS of 0.19V/decade, µFE of 10.7cm2/V-s, Ion/Ioff of 1.5×1010, and VTH shift of less than ± 0.5V under gate-bias stress. These results show that the proposed BCE-type process for fabricating a-IGZO TFTs is feasible.
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