High energy implantation: Present and future facilities

J.G Bannenberg,F.W Saris

doi:10.1016/0168-583x(89)90212-7

High energy implantation: Present and future facilities

J.G Bannenberg, F.W Saris

https://doi.org/10.1016/0168-583x(89)90212-7

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Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms	Publication Date: Feb 1, 1989
Citations: 3

Affiliation: Institute for Atomic and Molecular Physics

#Single Ended Van De Graaff #High Energy Implantation #Van De Graaff #Dc Type #Electrostatic Focusing #Rf Accelerator #Future Facilities #Multiple Beam #Beam Current #Charge Exchange

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Abstract Accelerators of the tandem type are in common use for high energy ion implantation. The necessary charge exchange at two stages limits the maximum ion current to

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High energy implantation: Present and future facilities