Abstract
A 5 MV implanter has been installed at the Centre de Recherches Nucléaires (CRN) of Strasbourg in collaboration with Vivirad-High-Voltage in the framework of the European Network on Ion Beam Processing of Semiconductors. This single-ended Van de Graaff is built using a new concept of discrete electrodes and is equipped with a microwave ion source. A first beam line with an electrostatic scanning device has been constructed. The end station containing a goniometric wafer holder is coupled with the 4 MV accelerator to allow in situ implantation and analysis by nuclear techniques. The possibility of low temperature operations and control is also available. The performance of the machine will be reported and applications in material modification and analysis will be described. Particular attention will be paid to effects of high energy implantation in semiconductors (range, defects, amorphization-recrystallization). Further developments and applications in other fields will be presented.
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