Abstract
The programming mechanism and erasing efficiency in P-channel flash EPROMs are presented in this paper. With impact ionization programming mechanism, reliability problem is effective reduced. And, the margin of VTH shifts is obvious from –1V to –7.6V for deeply programming or erasing. For the low voltage operation, this high efficiency stack gate flash EPROM can be easily implemented.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
