Abstract
We have presented a design method of RF power Si-MOSFETs for low voltage and high power-added efficiency operation. It has been demonstrated that 0.2 /spl mu/m gate length Co-salicided Si MOSFETs can achieve high power-added efficiency of more than 50% at 2 GHz RF operation with sufficient breakdown voltage (V/sub dss/S) by choosing optimum gate oxide thickness and N/sup -/ extension impurity concentration. Especially, efficiency of more than 50% was confirmed under very low supply voltage of 1.0 V, as well as higher supply voltage such as 2 and 3 V. The small gate length Co salicided Si-MOSFET is a good candidate for low-voltage, high efficiency RF power circuits for 2 GHz operation.
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