Abstract
A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-/spl mu/m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.
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