High Breakdown Voltage Characteristics in Normally-off 4H-SiC VJFET Using TCAD Simulation

Abstract

The high temperature dependent breakdown voltages in normally-off 4H-SiC VJFET are simulated using Sentaurus TCAD at different temperatures ranging from 27 to 500˚C. Temperature dependent breakdown voltages simulations reveal the decrement in breakdown voltages with increasing temperature, and device exhibits negative temperature coefficient. In addition, breakdown voltages are straight forwardly linked with associated parameters like impact ionization, which is strongly dependant on electric field. The improved breakdown voltage of 14kV (drain leakage current 10-8 A) indicates relatively high electric field of 2.2 MV/cm. In addition, its high breakdown capability and low leakage current with adjustable channel width make 4H-SiC VJFET a desirable device for high voltage power applications.