Abstract
The authors report the fabrication of an InP n-channel MESFET with high breakdown voltage. Using buried p/sup +/ planar doping, they have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 V. RF measurement gave a maximum frequency of oscillation, f/sub max/, =15 GHz for the 1- mu m gate length device and 9 GHz for the 2- mu m device. The high gate-drain breakdown voltage allows these devices to pinch-off at high drain-source bias. Currently the thermal breakdown at the mesa edges limits these devices from operating at high drain current, and the RF performance is basically limited by the ohmic contacts resistivity. With optimizations in these areas, InP MESFET operating at higher power and frequency is very possible. >
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