Abstract
HgTe-CdTe superlattices have been grown on GaAs (100) substrates by molecular beam epitaxy. X-ray diffraction analysis shows the superlattices to be single crystalline with well defined periods. Temperature-dependent infrared absorbance measurements indicate that the superlattices have band gaps with positive temperature coefficients. The band-gap temperature dependence is in semiquantitative agreement with theoretical calculations.
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