Abstract
The different mechanisms causing bandgap narrowing in heavily doped silicon are reviewed. A distinction is made between many-body effects and the effects due to random impurity distribution. The values of bandgap narrowing, calculated using a theoretical model, are compared with the experimental results. Recombination in heavily-doped silicon is discussed and the different recombination mechanisms, present at high doping levels, are explained. Experimental values for the minority-carrier lifetime as a function of the doping level are given. Surface recombination at the heavily doped Si/SiO 2 interface is discussed, the trnasport equations in the case of a position dependent bandgap are derived, and finally the influence of heavy-doping effects on the performance of several devices is discussed.
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