Hall effect and impurity levels in lead doped indium selenide

Abstract

Hall effect and deep hole level studies in indium selenide single crystal doped with lead are reported. The temperature dependence of the hole mobility can be interpreted by combining the homopolar optical phonon and the ionized impurity scatterings. Electrical properties above 180 K are dominated by an acceptor center at 0.48 eV from the valence band. Moreover, two hole traps of 0.49 and 0.63 eV depths have been evidenced by deep-level transient spectroscopy measurements. These centers are probably associated with defects or defect complexes due to lead atoms precipitated in the interlayers of the crystal.