Abstract
The impurity levels in Zn-doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
