Abstract
Abstract The temperature dependence of the Hall effect has been studied on InSe single crystals doped with Cl. The electron mobility can be explained by combining the homopolar optical-phonon and the ionized impurity scatterings. Moreover, two electron traps of depths 0.66 and 0.30 eV have been investigated by deep-level transient-capacitance spectroscopy measurements (DLTS). The first level is present in both pure and doped samples, while the second level only appears in doped samples.
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