Abstract
Ultrathin hafnium oxide (HfO 2) films have been deposited by rf sputtering on strained-Si 0.81Ge 0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO 2 films has been studied using current–voltage ( I– V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole–Frenkel emission takes over at a high electric field.
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