Abstract
A new atomic layer epitaxy technique for GaAs and AlAs was developed using trimethylgallium and trimethyl aluminium as group III sources and AsH 3 as the arsenic source. A clear self-limiting of the growth rate was attained under a wide range of growth conditions. The epitaxy also made it possible to grow high purity epitaxy layers below 1 × 10 15 cm −3. The growth mechanism was studied and a model based on selective adsorption of group III metal-organic molecules on surface arsenic atoms was proposed. The possibility of the applications of the atomic layer epitaxy method was examined and the selective growth of fine patterns and good uniformity of the epitaxial thickness on a large-scale wafer were found to be promising for a new process technology.
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