Abstract
Anhydrous zinc acetate (Zn(CH 3COO) 2) was found to be a suitable source material for growing thin films by the atomic layer epitaxy method. The growth of both ZnS and ZnO thin films with good reproducibility and uniform thickness from Zn(CH 3COO) 2 and H 2S or H 2O respectively was demonstrated. ZnS thin films showed excellent crystallinity and a high orientation of the growth direction. The ZnO thin films were mainly amorphous and the growth rate was approximately one-fifth of that found for ZnS growth. Some experiments were also carried out to dope the ZnS films with manganese and terbium, resulting in yellow and green luminescence respectively.
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