Abstract
AbstractThin dysprosium‐, scandium‐, and hafnium‐based oxide dielectric films are deposited by atomic vapor deposition (AVD) using tris(6‐ethyl‐2,2‐dimethyl‐3,5‐decanedionato) dysprosium [Dy(EDMDD)3], tris(6‐ethyl‐2,2‐dimethyl‐3,5‐decanedionato) scandium [Sc(EDMDD)3], and bis(tert‐butoxide) bis(methoxymethyl propanoxide) hafnium [Hf(OtBu)2(mmp)2] as precursors. Spectroscopic ellipsometry (SE), Rutherford backscattering (RBS) spectrometry, and X‐ray photoemission spectroscopy (XPS) demonstrate good control of the thickness and composition of the films. In particular, ternary and quaternary oxide alloys of any desired composition are grown. X‐ray diffraction (XRD) shows that the (Dy0.5Sc0.5)2O3 films are amorphous as grown, whereas the (Dy0.5Hf0.5)4O7 and (Sc0.5Hf0.5)4O7 films are crystalline. The crystal structures of DyxHf1–xOy and ScxHf1–xOy change from monoclinic to cubic around x∼0.1.
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