Abstract
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO2 films.
Highlights
A variety of transistors is beneficial to enhance the function and performance of the integrated circuit (IC)
HfO2 films with different thicknesses of about 30–70 nm were deposited by atomic vapor deposition (AVD) using an AIXTRON Tricent system with oxygen flow of 500 sccm and 800 sccm at a substrate temperature of 400 ◦ C and 500 ◦ C
The variable angle spectroscopic ellipsometry (VASE) measurements were performed by a dual angles has been calculated
Summary
A variety of transistors is beneficial to enhance the function and performance of the integrated circuit (IC). HfO2 has been the dielectric material in processor transistors for more than ten years already, and is an excellent material for metal oxide semiconductor (MOS) based microelectronic devices [3], resistive switching material in memory devices [4], and in optical coatings [2] As such, it has been studied extensively both experimentally and theoretically [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24]. With the help of X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD), and variable angle spectroscopic ellipsometry (VASE), the composition, crystallization phases, and optical constants of the films are characterized and penetratively studied from surface to interface
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