Abstract
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(0 0 1) substrates is demonstrated. High resolution X-ray diffraction rocking curves and reciprocal space maps indicate the high crystalline quality of the GaInNSb layers and illustrate a lattice match to GaSb with nitrogen and indium incorporations of 1.8% and 8.4%, respectively. The rms roughness of a nominally lattice matched GaInNSb/GaSb(0 0 1) layer was determined from atomic force microscopy to be ∼ 1.8 nm .
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