Abstract
In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique for in-line strain metrology.
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