Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Aurele Durand,Victor Boureau,Denis Rouchon,Daniel Benoit,Alain Claverie,Axel Hourtane,Delphine Lecunff,Martin Hytch,Patrice Gergaud

doi:10.1109/nano.2015.7388727

Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Aurele Durand, Victor Boureau + Show 7 more

https://doi.org/10.1109/nano.2015.7388727

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Publication Date: Jul 1, 2015

Citations: 9

Affiliation: STMicroelectronics (France), CEA LETI, CEA Grenoble, Atomic Energy and Alternative Energies Commission, Centre d’Élaboration de Matériaux et d’Études Structurales, French National Centre for Scientific Research

#Dark-Field Electron Holography #Resolution X-Ray Reciprocal Space Mapping + Show 8 more

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Abstract

In this paper we explore the benefit of combining High Resolution X-Ray Reciprocal Space Mapping (HR-RSM) and Dark-Field Electron Holography (DFEH) techniques for strain characterization of thin pMOS-like structures. We are able to simulate the measured HR-RSM from the displacement field extracted by DFEH. This is a first step developing High Resolution X-Ray Diffraction (HRXRD) as a viable technique for in-line strain metrology.

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