Abstract
The II-VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications.Cd1−XZnXTe is one of the II-VI ternary semiconductor materials whose bandgap can be tailored to any value between 1.48–2.26 eV as X varies from 0 to 1. It is promising material for high-efficiency solar cells, switching, and other optoelectronic devices. Polycrystalline thin film ofCd1−XZnXTe with variable composition (0≤X≤1) has been deposited on ultraclean glass substrates by screen printing method followed by sintering process. The optical and structural properties ofCd1−XZnXTe thin films have been examined. The optical bandgap of these films is studied using reflection spectra in wavelength range of 350–900 nm by using double beam spectrophotometer. The structure of sample was determined from X-ray diffraction patterns. The films were polycrystalline in nature having wurtzite (Hexagonal) structure over the whole range studied. The lattice parameters vary almost linearly with the composition parameterX, following Vegard's law. Sintering is a very simple and viable method compared to other cost-intensive methods. The results of the present investigation will be useful in characterizing the material CdZnTe for its applications in photovoltaics.
Highlights
In recent years, II-VI compound semiconductors are attracting a great deal of attention because of their potential abilities in a wide spectrum of optoelectronic devices [1,2,3,4,5,6]
A Cd1−X ZnX Te thin film is very useful in high-efficiency tandem solar cell fabrication [7] because of the ease in tuning its bandgap in visible region [16]
We have shown here the X-ray diffraction (XRD) traces of CdTe and Cd.4Zn.6Te in Figures 4 and 5, respectively
Summary
II-VI compound semiconductors are attracting a great deal of attention because of their potential abilities in a wide spectrum of optoelectronic devices [1,2,3,4,5,6]. The use of thin-film polycrystalline semiconductors has attracted much interest in an expanding variety of applications in various electronic and optoelectronic devices. Thin film of Cd1−X ZnX Te was prepared by variety of techniques, such as two-source vacuum evaporation [16, 17], molecular beam epitaxy [18], chemical vapour deposition [19], metal organic chemical vapour deposition [20], two-stage process [21], and thermal evaporation [22]. Sintering is one of the best techniques allowing the preparation of polycrystalline semiconducting films with ease, low costs, and large-area applications. It is extremely simple and viable compared to other cost-intensive methods [23,24,25,26]
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