GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design

Abstract

The traditional GeSn/GeSiSn single-heterojunction (SH) n-channel tunneling field-effect transistor (NTFET) faces a serious off-state current (IOFF) breakdown and a subthreshold swing (SS) degradation when the channel length is scaled to 10 nm. In this work, we propose a double-heterojunction (DH) short channel NTFET by utilizing heterojunction engineering. A 60% lower IOFF value (4.83 × 10−10 A μm−1), a 6.2 times higher ION value (9.39 × 10−6 A μm−1) and an SS of 39.14 mV/dec are achieved in the DH NTFET at 0.3 V compared to the SH NTFET when the channel length is 10 nm.