Abstract
In this paper, the previously proposed side-contacted field effect diode (FED) is carefully studied and its characteristic is compared against that of a modified FED and a metal oxide semiconductor field effect transistor (MOSFET). The influences of the body thickness, each gate length and access resistance are investigated. The figures of merit including intrinsic gate delay time and energy-delay product, which represent the speed and switching energy of the device, respectively, are studied. Our results highlight that FEDs are good candidates for obtaining a high Ion/Ioff ratio with a relatively short delay time compared to conventional FEDs and MOSFETs. We show that by a careful scaling of the source–drain region, the access resistance can be optimized. We demonstrate that a well-tempered device with a high switching response and a lower energy consumption can be achieved with a 30 nm body thickness, 85 nm source–drain length and a drain gate length longer than the source gate length.
Published Version
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