Abstract
The generation of interface states is observed in the Si-SiO2 system when a photo-injected electron current is passed through the MOS structure. The increase in the density of interface states as a function of total charge passed can be fitted by assuming that there are about 1012 sites/cm2 that can interact with the electron current, with a cross section of 10-18-10-19 cm2, and become interface states. Within the sample-to-sample variations, generation is independent of direction of current and of temperature (97°K-0°C). More than 50% of the states are stable for 6 months at room temperature but they anneal rapidly above 200°C leaving a residue of electrons trapped near the Si-SiO2 interface.
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