Abstract
A new floating-body effect in advanced fully-depleted SOI MOSFETs is revealed. Gate tunneling current is responsible for the body charging and may lead to the onset of an abnormal peak in transconductance. This effect occurs even at low drain voltage, is gate area-dependent, and can be modulated by driving the back-gate from weak to strong accumulation. A qualitative analytical model is proposed to explain the experimental enhancement of the transconductance peak and practical implications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
