Abstract
To improve the functionality of state-of-the-art integrated circuits, it is often necessary to create gate oxides of various thicknesses on a single chip. Currently, double oxidation is used for this purpose: a thick dielectric is created as a result of two oxidation processes, and a thin dielectric – only one. In this paper, the formation of dual gate oxide using pyrogenic oxidation and ISSG (in situ steamgeneration) is investigated. It is shown that ISSG oxidation during the creation of the 2nd oxide has a negligible effect on the thickness of the 1st thick oxide compared with pyrogenic oxidation, which is explained by the kinetics of radical oxidation of silicon.
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