Abstract
ABSTRACTWe propose a short channel gate overlapped lightly doped drain (GOLDD) poly-Si TFT employing 45° tilt implant for source and drain (S/D) regions without any additional ion doping or mask. Oblique-incident ELA activation is performed to activate both n+ S/D and n- LDD regions as well as cure junction defects. The proposed poly-Si TFT can suppress the anomalous leakage current, and exhibit the better reliability against the hot-carrier stress.
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