Abstract
This paper describes the design and the stages of development of a light-emitting diode (LED) based on dilute nitride semiconductors on a silicon substrate. Current-voltage characteristics and electroluminescence spectra were obtained for the LED structure. The LED demonstrates intensive electroluminescence at a wavelength of 645 nm up to the temperature of 360 K. Besides, the resulting LED structure has a good temperature stability of the emission wavelength and a high breakdown voltage of ~−40 V.
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