Abstract
High-oriented Li-Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al(3+)- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at -5V, were measured at -2.3 × 10(-8) A and -1.0 × 10(-10)A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.
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